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High-Precision Bandgap Voltage Generation Method With Chopper Stabilization Technique

机译:具有斩波稳定技术的高精度带隙电压产生方法

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A Three-level chopping technique to reduce offset caused by mismatch of the Wilson Current-mirror and PNP bipolar transistor is descried and presented. Input referred offset voltage of the PNP transistor is reduced on first level. On second level, Wilson Current-mirror offset is further reduced along with the low frequency 1/f noise caused by the self-biased circuit. The last level is used to reduce offset of self-biased circuit two. The proposed BGR was simulated in a temperature range from -45°C and 125°C. Simulate results showed that the standard deviation of the BGR output voltage without chopping is 9 times higher than that of when chopping is enabled. The proposed three-level chopping technique is verified improving performance characteristics of conventional BGR circuit. The maximum supply current is 36uA and the area of layout is 0. 085mm2 with a standard 0.13um 1P4M CMOS process.
机译:已经描述了一种三级斩波技术,以减少由威尔逊电流镜和PNP双极晶体管不匹配引起的偏移的偏移。输入的PNP晶体管的输入引用偏移电压在第一级降低。在第二级,威尔逊电流镜偏移进一步减少了由自偏置电路引起的低频1 / F噪声。最后一个级别用于减少自偏置电路二的偏移。所提出的BGR在-45℃和125℃的温度范围内模拟。模拟结果表明,BGR输出电压的标准偏差而不会斩波的速度高于斩波时的9倍。所提出的三级斩波技术经过验证改善传统BGR电路的性能特征。最大电源电流为36UA,布局面积为0.085mm2,标准为0.13um 1p4m CMOS工艺。

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