Analysis of Characteristics of High Voltage IGBT under Low Temperature

摘要

In practical application, IGBT can suffer extremely low temperature stress, which can also lead to the device failure as the high temperature stress. In order to explore the failure mechanism of the device at low temperature, the characteristics of 6.5kV FS-IGBT at low temperature (-40) are simulated by TCAD simulator and compared with that of room temperature (25) in this paper. The results show at low temperature, the breakdown voltage obviously reduces, and the duration of dynamic avalanche is extended and a destructive stationary filament forms when the IGBT is turned off under overstress condition.