Operation Mechanisms of the Tunneling Contact Thin Film Transistor

摘要

Operation mechanisms of a previously developed tunneling contact thin film transistor (TCT) are studied in this work. TCAD numerical simulations are used to derive the electrostatic potential properties of the IGZO TCT, based on which the device operations are revealed. The experimental devices' electrical characteristics are well reproduced with numerical simulations by including proper device physics. Comparisons to the conventional thin film transistors are performed to show the differences in their operations.