Z²-FET: a multi-functional device used for photodetection

摘要

In this work, we explore the application of Z²-FET in photodetection with TCAD simulation. Dynamic coupling effect is used to build up the carrier injection barrier and restore the feedback mechanism in Z²-FET with thick Si layer. The device is then used for photodetection in two operation modes, where the photoelectron accumulating at the front gate interface reduces the turn-on voltage (V_ON) with a sensitivity up to 10V/(μJ/cm²). With high output current and one-transistor random access ability, Z²-FET can find potential application as compact one-transistor active pixel sensor (1T-APS).