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Development of the Method of Determining of InGaN Based Leds Tended to Early Degradation on the Results of Current Tests

机译:根据当前测试结果确定倾向于早期降解的InGaN基LED的测定方法的开发

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Low-power commercial InGaN based light-emitting diodes were tested at a constant current of 25 A/cm2 for 7,000 hours. A methode for determining of LEDs tended to early degradation based on electrical and electro-optical characteristics measured in the threshold current region has been developed. It is determined that the rate of degradation is higher for LEDs with low values of the initial quantum efficiency.
机译:低功率商用InGaN基发光二极管在25 A / cm2的恒定电流下测试了7,000小时。已经开发了基于在阈值电流区域中测量的电和电光特性来确定趋于早期退化的LED的方法。已经确定,对于具有较低初始量子效率值的LED而言,降解速率更高。

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