首页> 外文会议>IEEE International Magnetics Conference >Micromagnetic model analysis of spin-torque oscillator (STO) integrated into recording write head for microwave-assisted magnetic recording-Oscillation of STO vs. rise time of in-gap field–.
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Micromagnetic model analysis of spin-torque oscillator (STO) integrated into recording write head for microwave-assisted magnetic recording-Oscillation of STO vs. rise time of in-gap field–.

机译:集成到记录写头中的自旋转矩振荡器(STO)的微磁模型分析,用于微波辅助磁记录-STO的振荡与间隙内磁场的上升时间-。

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Microwave-assisted magnetic recording (MAMR) [1] is one candidate for next-generation perpendicular magnetic recording [2]. Stable oscillation is one of the most important factors for spin-torque oscillators (STOs) used in a MAMR system. We performed micromagnetic simulations and found that stable STO oscillations were hard to obtain when the STO was inserted into the main pole - trailing shield (MP-TS) gap, primarily due to the strong magnetostatic interactions between the STO and write head [3]. We also showed that the rise time of the field applied to an isolated STO greatly affected the STO oscillation [4], i.e., a shorter rise time gave better, more consistent STO oscillation. In this paper, we show that the rise time of the in-gap field acting on the STO is critical to stable STO oscillation. We also show that the combination of a tilted STO and a tilted main pole - trailing shield gap results in stable STO oscillation due to weaker magnetostatic interactions between the STO and write head. Calculation Model A micromagnetic model analysis was carried out considering a double-layered STO utilizing transmission spin torque. We used commercial micromagnetic software (Fujitsu, EXAMAG v.2.1) [5]. The thickness of the field generation layer (FGL) was 10 nm, whilst the spin injection layer (SIL) was 2 nm thick. A 2 nm thick, non-magnetic inter layer was located between the FGL and SIL. The saturation magnetization (4 π Ms) was 20 kG for the FGL and 6 kG for the SIL. The anisotropy fields (Hk) of both the FGL and SIL were 31.4 Oe. The exchange constants, A, were 2.5 × 10-6 erg/cm3 for the FGL and 0.75 × 10-6 erg/cm3 for the SIL. The Gilbert damping factor, α, was 0.02 for both the FGL and SIL. The write head model had overall dimensions close to those of commercial write heads (3.25 μm × 2.55 μm × 4.5 μm).
机译:微波辅助磁记录(MAMR)[1]是下一代垂直磁记录[2]的一种候选方法。对于MAMR系统中使用的自旋扭矩振荡器(STO),稳定的振荡是最重要的因素之一。我们进行了微磁模拟,发现当将STO插入主磁极-尾随屏蔽(MP-TS)间隙时,很难获得稳定的STO振荡,这主要是由于STO和写头之间的强静磁相互作用[3]。我们还表明,施加到隔离的STO的磁场的上升时间极大地影响了STO振荡[4],即较短的上升时间给出了更好,更一致的STO振荡。在本文中,我们证明了作用在STO上的间隙内磁场的上升时间对于稳定STO振荡至关重要。我们还表明,倾斜的STO和倾斜的主磁极-尾随屏蔽间隙的组合会导致STO振荡稳定,这是因为STO和写头之间的静磁相互作用较弱。计算模型考虑了利用传输自旋扭矩的双层STO,进行了微磁模型分析。我们使用了商用微磁软件(Fujitsu,EXAMAG v.2.1)[5]。场产生层(FGL)的厚度为10nm,而自旋注入层(SIL)的厚度为2nm。 2 nm厚的非磁性中间层位于FGL和SIL之间。饱和磁化强度(4πM s FGL为20 kG,SIL为6 kG。各向异性场(H k FGL和SIL的均值均为31.4 Oe。交换常数A为2.5×10 -6 尔格/厘米 3 对于FGL和0.75×10 -6 尔格/厘米 3 SIL。 FGL和SIL的吉尔伯特阻尼系数α均为0.02。写入头模型的整体尺寸接近商用写入头(3.25μm×2.55μm×4.5μm)。

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