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Enhanced Photon Detection Efficiency of Silicon Single Photon Avalanche Photodetectors Enabled by Photon Trapping Structures

机译:光子俘获结构使硅单光子雪崩光电探测器的光子检测效率提高

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摘要

Silicon single photon avalanche photodetectors with photon trapping structures demonstrate absorption enhancement from 800 nm to 1100 nm, and with a response time of 28 ps, opening the possibility to improve their photon detection efficiency, with low time jitter and low dark count rate.
机译:具有光子俘获结构的硅单光子雪崩光电探测器展示了从800 nm到1100 nm的吸收增强,并具有28 ps的响应时间,这为提高其光子探测效率,低时间抖动和低暗计数率提供了可能性。

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