Simulation of multiplying electron distribution in electron multiplier layer for EBAPS

摘要

The multiplying electron distribution within the electron multiplier layer for electron bombarded active pixel sensor (EBAPS) was simulated. The photoelectron scatting trajectories in electron multiplier layer were simulated based on the low-energy electron-solid interaction model and Monte Carlo method. According to semiconductor theory, the influence factors (the incident electron energy, depth and beam diameter) how affecting the energy loss rate were studied. Therefore, the photoelectron scatting trajectories and multiplying electron distribution in electron multiplier layer can be simulated, which will provide theoretical basis to further simulate the charge collection efficiency of EBAPS.