Excellent threshold switching device (Ioff ∼ 1 pA) with atom-scale metal filament for steep slope (< 5 mV/dec), ultra low voltage (Vdd = 0.25 V) FET applications

摘要

To realize a steep-slope-FET with low leakage current and low operating bias, we engineered two types of atom-switch devices and integrated them with a silicon MOSFET. The integrated atom-switch-FET exhibits extremely low leakage current (10-7 μA/μm), high Ion/Ioff ratio (> 107), low operating bias (<; 1 V) and sub-5 mV/dec subthreshold swing with abrupt transition range of 104. Furthermore, through the comprehensive understanding on the steep-slope-transition phenomenon, control parameters of atom-switch devices such as Roff and Vth, as for optimal performances of atom-switch-FET were investigated at various operating bias conditions.