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Responses of silicon PIN diode to low energy gamma rays

机译:硅PIN二极管对低能伽马射线的响应

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It is important to detect low energy gamma rays precisely for the purpose of diagnosis in nuclear medicine, gravitational wave research and detection of underground nuclear test. Since a silicon sensor has an advantage of fast response, good intrinsic energy resolution and providing high signal yield in a small active volume, it can be used to detect low energy gamma rays without the help of a scintillator. We developed silicon PIN diodes and photodiodes on high resistivity, n+ doped, and 6-in. double-side polished silicon wafers. We present measurements of responses, such as signal pulse heights, signal-to-noise ratios and energy resolutions, of these detectors to low energy gamma rays from 241Am, 133Ba and 57Co radioactive sources which provide gamma rays between 14.4 keV and 136.5 keV of energy. We also compare the measurement results depending on the diode thickness.
机译:精确地检测低能伽马射线对于核医学的诊断,重力波研究和地下核试验的检测非常重要。由于硅传感器具有响应速度快,固有能量分辨率高以及在较小的有效体积内提供高信号产量的优点,因此无需闪烁体就可用于检测低能伽马射线。我们开发了高电阻,n +掺杂和6英寸高电阻率的硅PIN二极管和光电二极管。双面抛光硅晶片。我们介绍了这些探测器对来自241Am,133Ba和57Co放射源的低能伽玛射线的响应测量,例如信号脉冲高度,信噪比和能量分辨率,这些放射源提供的能量介于14.4 keV和136.5 keV之间。我们还根据二极管的厚度比较测量结果。

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