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Feasibility analysis of a novel production method for monolithic integrated MEMS with nanogaps

机译:一种具有纳米间隙的单片集成MEMS新型生产方法的可行性分析

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This paper analyses a novel production technique for the fabrication of microelectromechanical system (MEMS) with a gap in the scale of nanometer. The technology is based on a density-changing layer, which let a gap arise through the shrinkage of this layer. After the description of the technology, the requirements for monolithic integration and CMOS compatibility with respect to this technology are worked out. It has been discovered that there are several challenges to be overcome. Especially to find a material composition which match the requirements is important as well as to set up the process without affecting other CMOS device parameters. But if these challenges are solved the process will be suitable for various applications and enable to open up new markets.
机译:本文分析了一种新型的制造技术,该技术用于制造纳米级间隙的微机电系统(MEMS)。该技术基于密度改变层,该密度改变层通过收缩该层而产生间隙。在描述了该技术之后,就该技术提出了单片集成和CMOS兼容性的要求。已经发现,有几个挑战需要克服。尤其重要的是找到符合要求的材料成分,并且在不影响其他CMOS器件参数的情况下建立工艺非常重要。但是,如果解决了这些挑战,该过程将适用于各种应用程序并能够开拓新的市场。

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