Heavy-Ion Device Cross-Section Response in Magnetic Tunnel Junctions for a Radiation Hardened 16Mb Magnetoresistive Random Access Memory (MRAM)

摘要

Heavy-ion device effect cross-sections from irradiated MRAM Magnetic Tunnel Junctions are LET/atomic number, and not fluence, dominated, with distribution tails similar to thermally-accelerated resistance and magnetoresistance shifts that also depend physically on the tunnel barrier.