Study of the switching performance and EMI signature of SiC MOSFETs under the influence of parasitic inductance in an automotive DC-DC converter

摘要

With low loss, fast switching speed, and high temperature capabilities, silicon carbide (SiC) based devices are beneficial to the automotive power converters in terms of efficiency increase and size reduction. Nevertheless, as a result of fast switching transitions and low on-state resistance of SiC devices, they are prone to overshoots and oscillations on switching waveforms, with the presence of parasitic inductances in the circuit. The overshoots and oscillations further contribute to increased EMI emissions. This paper aims at studying the influence of parasitic inductances on switching performance of SiC MOSFETs and corresponding EMI signatures in automotive DC-DC converters.