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5.4 A 32nW bandgap reference voltage operational from 0.5V supply for ultra-low power systems

机译:5.4适用于0.5V电源的32nW带隙基准电压,适用于超低功耗系统

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Most systems require a voltage reference independent of variation of power supply, process, or temperature, and a bandgap voltage reference (BGR) often serves this purpose. For ultra-low power (ULP) systems, the BGR may constitute a significant component of standby power, and the system start-up voltage is often determined by the voltage, V, at which the BGR becomes operational. Lowering V can also allow an ULP system to continue operation longer as its battery or energy harvested input voltage decreases. The minimum V for state-of-the-art BGRs is restricted by V+V [1], where V is the emitter-base voltage of a pnp transistor, and V is the drain-source saturation voltage of a MOS transistor. Recent work brings the V voltage down to 700mV [2]. There is a need to reduce the standby power and V of a BGR to increase the lifetime of ULP systems. This paper presents a BGR circuit with measured minimum operating V of 500mV, reducing the V of [2] by 1.4x. Further, the power consumption of the proposed circuit is 32nW, which is 1.6x lower than the non-duty cycled BGR reported in [2]. A 2x-charge pump based bandgap core, a switched-capacitor network (SCN), and a current controlled oscillator and clock doubler circuit enable a BGR with a temperature variation of 75ppm/°C and power supply rejection (PSR) of up to -52dB at DC.
机译:大多数系统需要与电源,过程或温度的变化无关的电压参考,并且带隙电压参考(BGR)通常用于此目的。对于超低功率(ULP)系统,BGR可以构成待机功率的显着分量,并且系统启动电压通常由BGR变为可操作的电压V.降低V还可以允许ULP系统随着电池或能量收获的输入电压减小而更长时间的操作。最先进的BGR的最小v受V + V [1]的限制,其中V是PNP晶体管的发射极限电压,V是MOS晶体管的漏极源极饱和电压。最近的工作将V电压降至700mV [2]。需要减少BGR的备用功率和V,以增加ULP系统的寿命。本文介绍了BGR电路,测量最小操作v为500mV,减少了[2]的v 1.4倍。此外,所提出的电路的功耗为32nW,比[2]中报道的非占空比低1.6倍。基于2×电荷泵的带隙核心,开关电容网络(SCN)和电流控制的振荡器和时钟倍增电路,使BGR具有75ppm /°C和电源抑制(PSR)的温度变化,可以实现高达 - 52db在DC。

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