graphene devices; hafnium compounds; integrated circuit testing; integrated memory circuits; logic testing; resistive RAM; three-dimensional integrated circuits; 3D cross-point architecture; 3D vertical stacked memory structures; 3D-stacked RRAM; C; G-RRAM; HfOsubx/sub; SET compliance; atomic layer; graphene edge; graphene planar electrode; graphene plane electrode; graphene sheet resistance; graphene-oxide interface; memory window; power consumption; reset current; resistance components; size 3 angstrom; stack height; vertical RRAM structure; voltage 2 V to 4 V; Arrays; Electrodes; Graphene; Hafnium compounds; Resistance; Three-dimensional displays;
机译:以石墨烯/ CNT为边缘电极的堆叠式3D RRAM阵列
机译:基于3D多孔石墨烯/ MnO2纳米棒和石墨烯/银杂化薄膜电极的高性能柔性不对称超级电容器
机译:用优化的等离子增强原子层沉积(PEALD)处理的TiN电极的按比例缩放的X-bar TiN / HfO_2 / TiN RRAM单元
机译:VACUA浮力由真空袋提供,该真空袋包括缠绕在三维(3D)框架上的真空膜膜来移动空气,在其中3D石墨烯“浮动”在六个成员碳原子的第一堆叠的二维平架板上 S.
机译:使用由MoS2,石墨烯和MoS2 /石墨烯复合材料的原子薄2D结构制成的电极分析电化学储能。
机译:以石墨烯/ CNT为边缘电极的堆叠式3D RRAM阵列
机译:用于丝型RRAM器件性能改进的双楔形电极的3D几何工程