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MASH2-0 electromechanical sigma-delta modulator for capacitive MEMS sensors using dual quantization method

机译:采用双量化方法的MASH2-0机电sigma-delta调制器,用于电容MEMS传感器

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This paper presents a new control structure for an electromechanical sigma-delta modulator (EM-ΣΔM) based on the dual quantization technique. The modulator adopts a 2-0 multi-stage noise-shaping structure (MASH2-0), which was studied by system-level modeling and hardware implementation using an FPGA. The study shows that the MAH2-0, like the MASH2-2, is inherently stable, has a high overload-input level and high dynamic range compared to single-loop EM-ΣΔM. However, the MASH2-0, with its simpler implementation, achieved a higher dynamic range and better signal-to-noise ratio than a comparable MASH2-2 and fourth-order single-loop EM-ΣΔM. A capacitive MEMS accelerometer was designed and employed in this system. Within a bandwidth of 1 KHz, the sensor achieved a noise-floor level of −130 dB, a full scale of ±20g acceleration, and a bias instability of 20 µg for a period of three hours. The investigation confirms the concept of the MASH2-0 structure and shows its potential as a closed-loop interface for high-performance capacitive MEMS inertial sensors.
机译:本文提出了一种基于双重量化技术的机电式Σ-Δ调制器(EM-ΣΔM)的新控制结构。该调制器采用2-0多级噪声整形结构(MASH2-0),已通过系统级建模和使用FPGA的硬件实现对其进行了研究。研究表明,与MASH2-2一样,MAH2-0具有固有的稳定性,与单回路EM-ΣΔM相比,具有较高的过载输入水平和较高的动态范围。但是,与类似的MASH2-2和四阶单环EM-ΣΔM相比,MASH2-0的实现更为简单,具有更高的动态范围和更好的信噪比。设计了电容式MEMS加速度计,并在该系统中采用了该加速度计。在1 KHz的带宽内,该传感器在三个小时的时间内达到了-130 dB的本底噪声水平,±20g的满刻度加速度和20 µg的偏压不稳定性。研究证实了MASH2-0结构的概念,并显示了其作为高性能电容式MEMS惯性传感器的闭环接口的潜力。

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