Selector devices for 3-D cross-point ReRAM

摘要

To integrate cross-point (4F2) ReRAM device array, we need to develop bi-directional selector device to suppress the sneak current path through the unselected devices. Although various candidates with selector properties have been recently reported, several problems such as insufficient current density at set/reset operations for nano-scale devices, low selectivity, and poor endurance have been remained. In this talk, we report two types of selector devices, threshold switching device based on insulator-metal transition (IMT) and multi-layered tunneling oxide device for cross-point ReRAM application. We propose the feasibility for 3-D vertical 1S-1R type ReRAM for future ultra-high density memory applications.