This paper addresses physical characteristics of FET materials, the method of designing switching amplifier using GaN FET and the audio performance comparison of silicon and GaN FET. The physical characteristics of GaN FET are excellent, but there is a technical limitation to apply to consumer electronics. Depletion mode GaN FET is used in proposed system. Its characteristic is better than Enhance mode. But it has characteristic of normally turn on. To solve this problem, cascoded GaN switch block is used. It is combination of depletion mode GaN and enhanced mode Si. The proposed method has the outstanding audio performance than switching amplifier used in silicon.
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机译：本文解决了FET材料的物理特性，使用GaN FET设计开关放大器的方法和硅和GaN FET的音频性能比较。 GaN FET的物理特性优异，但适用于消费电子产品有技术限制。耗尽模式GaN FET用于提出的系统。其特征优于增强模式。但它具有正常开启的特征。要解决此问题，使用级联GaN交换机块。它是耗尽模式GaN和增强模式Si的组合。该方法具有优异的音频性能，而不是硅中使用的开关放大器。
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