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First-principle study of the electronic and optical properties of Ti doped ZnS

机译:钛掺杂ZnS的电子和光学性质的第一性原理研究

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Based on the density functional pseudopotential method,the electronic structures and the optical properties for Ti doped ZnS are investigated in detail.The calculation results indicate that the doping of Ti widens the band gap of ZnS and the Fermi level shifts upward into the conduction band.The impurity elements form new highly localized impurity energy level at the bottom of the conduction band near the Fermi level.,.Meanwhile,blue shifts are revealed in both the imaginary part of dielectric function and the absorption spectra corresponding to the change of band gaps.
机译:基于密度泛函伪势方法,详细研究了Ti掺杂ZnS的电子结构和光学性质。计算结果表明,Ti的掺杂使ZnS的带隙变宽,费米能级向上移入导带。杂质元素在费米能级附近的导带底部形成新的高度局部化的杂质能级。同时,在介电函数的虚部和与带隙变化相对应的吸收光谱中都显示出蓝移。

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