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Readout Integrated Circuit Design for infrared detector with Dual Switched Type

机译:双开关型红外探测器的读出集成电路设计

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This research designed a readout circuit with dual type switching for infrared sensors. The pixel readout circuit structure uses DI (direct injection) and CTIA (capacitive transimpedance amplifier). The readout circuit has four operating modes,which control single or dual band using signal control and the TSMC 0.35um 2P4M 5V process. The input current middle wavelength is set between 2nA to 4nA, the long wavelength is set between at 6nA to 8nA, the output voltage swing is 2.8V,and power consumption is 22.19mW.
机译:本研究设计了一种用于红外传感器的具有双类型开关的读出电路。像素读出电路结构使用DI(直接注入)和CTIA(电容跨阻放大器)。读出电路具有四种工作模式,分别通过信号控制和TSMC 0.35um 2P4M 5V工艺来控制单波段或双波段。输入电流中间波长设置在2nA至4nA之间,长波长设置在6nA至8nA之间,输出电压摆幅为2.8V,功耗为22.19mW。

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