首页> 外文会议>2011 21th International Crimean Conference Microwave and Telecommunication Technology >Electroconductive properties of nanodimensional CoSbx(30 nm)/SiO2(100 nm)/Si(001) film compositions — Functional elements of thermoelectrics
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Electroconductive properties of nanodimensional CoSbx(30 nm)/SiO2(100 nm)/Si(001) film compositions — Functional elements of thermoelectrics

机译:纳米CoSb x (30 nm)/ SiO 2 (100 nm)/ Si(001)薄膜组合物的导电性能—热电功能

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This paper is devoted to the study of the effect of deposition conditions and heat treatment on the structure and the phase composition and electroconductive properties of nanodimensional CoSbx(30 nm)/SiO2(100 nm)/Si(001) (where x = 3; 3.5) film compositions (NFC''s). The resistance dependence on temperature of NFC''s under investigation depends on the phase composition of a film and has a semiconductor character.
机译:本文致力于研究沉积条件和热处理对纳米CoSb x (30 nm)/ SiO 2

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