This paper is devoted to the study of the effect of deposition conditions and heat treatment on the structure and the phase composition and electroconductive properties of nanodimensional CoSbx(30 nm)/SiO2(100 nm)/Si(001) (where x = 3; 3.5) film compositions (NFC''s). The resistance dependence on temperature of NFC''s under investigation depends on the phase composition of a film and has a semiconductor character.
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