The output circuit of inverse class F power amplifier with slot resonators in the microstrip line ground plane

摘要

The modeling results of class F−1 power amplifier on GaN transistor NPTB00004 at operating frequency 1.6 GHz are presented. As a harmonics filter circuit the structure based of slot resonators in microstrip line ground plane was used. Modeling results had shown the drain efficiency and output power of the class F−1 power amplifier at operating frequency 59 % and 6 W correspondingly.