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Massive statistical process variations: A grand challenge for testing nanoelectronic circuits

机译:大量的统计过程变化:测试纳米电子电路的巨大挑战

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Increasing parameter variations, high defect densities and a growing susceptibility to external noise in nanoscale technologies have led to a paradigm shift in design. Classical design strategies based on worst-case or average assumptions have been replaced by statistical design, and new robust and variation tolerant architectures have been developed. At the same time testing has become extremely challenging, as parameter variations may lead to an unacceptable behavior or change the impact of defects. Furthermore, for robust designs a precise quality assessment is required particularly showing the remaining robustness in the presence of manufacturing defects. The paper pinpoints the key challenges for testing nanoelectronic circuits in more detail, covering the range of variation-aware fault modeling via methods for statiscal testing and their algorithmic foundations to robustness analysis and quality binning.
机译:纳米技术中越来越多的参数变化,高缺陷密度和对外部噪声的敏感性不断提高,导致了设计范式的转变。基于最坏情况或平均假设的经典设计策略已被统计设计所取代,并且开发了新的鲁棒性和耐变异性的体系结构。同时,测试变得极具挑战性,因为参数变化可能导致不可接受的行为或改变缺陷的影响。此外,对于稳健的设计,需要进行精确的质量评估,特别是要显示存在制造缺陷时的剩余稳健性。该论文更详细地指出了测试纳米电子电路的关键挑战,涵盖了通过静力测试方法及其对稳健性分析和质量分级的算法基础的变差故障建模的范围。

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