We propose the new process for fabricating Al-rich Al_2O_3 thin film, which is used as a charge storage layer for non-volatile Al_2O_3 memory. Nanoscale Al-rich thin film is deposited using RF magnetron co-sputtering by setting an Al metal plate on an Al_2O_3 target. Al-rich Al_2O_3 shows a larger conduction current in I-V characteristics and larger optical absorption than stoichiometric Al_2O_3 due to the increased electron trap sites. The C-V characteristics of the Al-rich Al_2O_3 thin film show a large hysteresis window due to the charge trapping effect in the Al-rich structure.
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