A Direct Method of Determining Complex Depth Profiles of Residual Stresses in Thin Films on a Nanoscale - Mechanics of Residually Stressed Systems

摘要

The basic ideas behind the calculation procedure of the developed ion beam layer removal method (ILR method) to determine complex depth profiles of residual stresses in thin films are explained. The mechanics of thin films on substrates in general and the effect of the substrate thickness on the stresses in particular are presented by means of a simple model system in order to improve the understanding and facilitate the application of the ILR method.