Power MOSFET macromodel accounting for saturation and quasi saturation effect

摘要

The paper presents a new macromodel for power MOSFETs that contain irregular I/sub d/-V/sub gs/ characteristics. In this model, the transistor channel region physical model is combined with empirical modeling for the additional circuit elements. These elements are needed to describe the ac and dc electrical properties and the special features of the power transistors like saturation and quasi saturation effects. Moreover, the present subcircuit model takes into consideration the low on-resistance and its temperature dependence observed in new power MOSFET structures. The three interelectrode capacitances simulation shows very accurate results with 5.1% maximum error and 4.9% average error. The macromodel achieves a very high performance in terms of speed, efficiency and accuracy without any problem in convergence.