Effects of Hf sources, oxidizing agents, and NH/sub 3/ radicals on properties of HfAlO/sub x/ films prepared by atomic layer deposition

机译：f源，氧化剂和NH / sub 3 /自由基对原子层沉积制备的HfAlO / sub x /薄膜性能的影响

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In this paper, we investigated the influence of the combination of precursors on the deposition rate, the uniformity, the amount of residual impurities, together with electrical properties.

机译：在本文中，我们研究了前体组合对沉积速率，均匀性，残留杂质量的影响以及电性能。

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来源
《Gate Insulator, 2003. IWGI 2003. Extended Abstracts of International Workshop on》|2003年|p.32-37|共6页
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Kawahara T.; Torii K.; Mitsuhashi R.; Mutoh A.; Horiuchi A.; Ito H.; Kitajima H.;
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中图分类无线电电子学、电信技术;
关键词
hafnium compounds; dielectric thin films; field effect transistors; impurities; electron mobility; atomic layer deposition; oxidation; Hf sources; oxidizing agents; NH/sub 3/ radicals; HfAlO/sub x/ films; atomic layer deposition; residual impurities; ele;

机译：compounds化合物;介电薄膜;场效应晶体管;杂质;电子迁移率;原子层沉积;氧化; H源;氧化剂; NH / sub 3 /自由基; HfAlO / sub x /膜;原子层沉积;残留杂质;元素;

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1. Effect of Hf Sources, Oxidizing Agents, and NH_3/Ar Plasma on the Properties of HfAlO_x Films Prepared by Atomic Layer Deposition [J] . Takaaki KAWAHARA, Kazuyoshi TORII, Riichirou MITSUHASHI, Japanese Journal of Applied Physics. Part 1, Regular Papers & Short Notes . 2004,第7A期

机译：f源，氧化剂和NH_3 / Ar等离子体对原子层沉积制备HfAlO_x薄膜性能的影响
2. Physical and Electrical Properties of Hf A1O_x Films Prepared by Atomic Layer Deposition Using NH_3/Ar Plasma [J] . Takaaki KAWAHARA, Kazuyoshi TORII, Hiroshi OHJI, Japanese Journal of Applied Physics. Part 1, Regular Papers & Short Notes . 2004,第11B期

机译：NH_3 / Ar等离子体原子层沉积制备Hf AlO_x薄膜的物理和电学性质
3. Properties of HfAlO film deposited by plasma enhanced atomic layer deposition [J] . Duo Cao, Xinhong Cheng, Tingting Jia, Nuclear Instruments & Methods in Physics Research. B, Beam Interactions with Materials and Atoms . 2013,第jula15期

机译：等离子增强原子层沉积HfAlO薄膜的性能
4. Effects of Hf Sources, Oxidizing Agents, and NH{sub}3 Radicals on Properties of HfAlO{sub}x Films Prepared by Atomic Layer Deposition [C] . Takaaki Kawahara, Kazuyoshi Torii, Riichirou Mitsuhashi, International Workshop on Gate Insulator . 2003

机译：HF源，氧化剂和NH {Sub} 3对原子层沉积制备的Hfalo {亚} X膜性能的影响
5. Investigation of High-Surface-Area Titanate (ATiO?3) Thin Films Prepared by Atomic Layer Deposition [D] . Lin, Chao. 2021

机译：用原子层沉积制备的高表面积钛酸盐（Atioα3）薄膜的研究
6. Band Offsets and Interfacial Properties of HfAlO Gate Dielectric Grown on InP by Atomic Layer Deposition [O] . Lifeng Yang, Tao Wang, Ying Zou, 2017

机译：原子层沉积在InP上生长的HfAlO栅介质的能带偏移和界面性质
7. Resistive switching property of HfO2 film prepared by atomic layer deposition and its 1D1R device [O] . 陆超 2016

机译：原子层沉积制备的HfO2薄膜的电阻转换特性及其1D1R器件

Effects of Hf sources, oxidizing agents, and NH/sub 3/ radicals on properties of HfAlO/sub x/ films prepared by atomic layer deposition

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