Characterization of a gate drive technique for snubberless operation of gate controlled devices

摘要

Several gate drive schemes have been suggested for snubberless operation of high current gate controlled devices. This paper characterizes one such technique which results in an acceptable compromise between switching speed, power dissipation and electromagnetic interferences (EMI). The paper begins with an analysis of the switching waveforms highlighting the device and circuit parameters which affect the switching characteristics. This is used to suggest how current and voltage transients and EMI can be reduced by suitably shaping the gate current. Experimental results are presented using a single switch converter and a MOSFET device.