ESD Evaluation of Tunneling Magnetoresistive (TMR) Devices

摘要

In this work we study and compare the dielectric breakdown and human body model electrostatic discharge (ESD) failure levels of tunneling magnetoresistive (TMR) sensors. An equivalent circuit for the TMR device is developed and used in SPICE circuit simulations to study its response to electrostatic discharge. Dielectric breakdown averated 2.3V and ESD testing showed device shorting at 8.6 V HBM.