Fabrication of self-assembling AlGaN quantum dot on AlGaN surfaces using anti-surfactant

摘要

We report on the first artificial fabrication of self-assembling AlGaN quantum dots (QDs) on AlGaN surfaces using metal organic chemical vapor deposition (MOCVD). The AlGaN QDs are fabricated using a growth mode change from 2-dimensional step-flow growth 3-dimensional island formation by modifying the AlGaN surface energy with Si anti-surfactant. The average lateral size and the thickness of fabricated AlGaN QDs, as determined by AFM, are approximately 20 nm and 6nm, respectively. The dot density was found to be controlled from 5x10 sup 10 cm sup -2 down to 2x10 sup 9 cm sup -2 by increasing the dose of Si anti-surfactant. We obtained the photoluminescence (PL) from AlGaN QDs embedded with Al sub 0,38 Ga sub 0.62N capping layers. The Al incorporation in AlGaN QDs was controllable within the range of 1-5