In this paper, we present some results of the newly devleoped on-wafer photothermal measurement. To study thermal anisotropy, the out-of-plane thermal diffusivity measured from this technique is compared with the in-plane thermal diffusivity by measured by ISTS [1]. In addition to the thermal properties, the agreement with mechanical [2] and optical properties are also shown. The significance of different thermal performance between low K dielectric medium materials and SiO_2 suggests that greater attention should be paid to thermal porperties for integrated devices with low K materials.
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