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Parallel implementations of transition fault simulation on computational RAM (C/spl middot/RAM)

机译:在计算RAM(C / spl middot / RAM)上并行执行过渡故障模拟

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Stuck-at faults and transition faults model how physical defects can disturb the proper operation of digital circuits. Two transition faults that are commonly considered are gate delay faults, where an unexpected lumped delay is associated with a gate input or output, and CMOS transistor stuck-open faults, where low-to-high or high-to-low output transitions cannot occur for certain input combinations to a gate. Fault simulation is the computationally intensive process of determining the proportion of faults that would be detected if a given sequence of test patterns were to be applied to a given circuit. The paper describes how a conventional parallel fault simulation algorithm for stuck-at, gate delay and stuck-open faults was adapted to exploit the massive single instruction multiple data (SIMD) parallelism available in the computational RAM (C/spl middot/RAM) architecture.
机译:滞留故障和过渡故障模拟了物理缺陷如何干扰数字电路的正常运行。通常考虑的两种过渡故障是栅极延迟故障,其中栅极输入或输出与意外的集总延迟相关;以及CMOS晶体管卡死故障,其中不会发生从低到高或从高到低的输出过渡用于门的某些输入组合。故障模拟是计算密集型过程,该过程确定如果将给定序列的测试模式应用于给定电路,将检测到的故障比例。本文描述了如何针对卡死,门延迟和卡死故障进行常规并行故障模拟算法,以利用计算RAM(C / spl middot / RAM)体系结构中可用的海量单指令多数据(SIMD)并行性。

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