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Electron escape dynamics from a biased quantum well

机译:来自有偏量子阱的电子逸出动力学

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Abstract: In this paper, a theoretical model calculating the electron escape time form a biased quantum well is presented. To solve Schroedinger equation for a quantum well under the influence of an electric field, the method of the logarithmic derivative of the wave function is used in the Green's function approach. Electron escape time is calculated by accounting for the partitioning of the total current into the thermionic emission and tunneling components. The current components are evaluated by properly accounting for the electron's group velocity and the redistribution of the density of states in the presence of an applied electric field. A comparison between this model and previously reported experimental results of the electron escape time is made, demonstrating excellent agreement. !8
机译:摘要:本文提出了一种计算有偏量子阱中电子逸出时间的理论模型。为了在电场的影响下求解量子阱的Schroedinger方程,格林函数方法中使用了波函数对数导数的方法。通过将总电流分配到热电子发射和隧穿分量中来计算电子逸出时间。通过适当考虑电子的群速度和在存在电场的情况下状态密度的重新分布,可以评估电流分量。在此模型与先前报告的电子逸出时间的实验结果之间进行了比较,证明了极好的一致性。 !8

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