Development of low phase noise millimeter-wave sources using MMIC technology

摘要

Millimeter-wave (MMW) sources based on MMIC technology have been developed in the past few years at TRW. These MMW sources included MMIC fundamental mode VCOs, and frequency source modules which integrated several MMIC chips. The MMICs were fabricated using high electron mobility transistor (HEMT) and heterojunction bipolar transistor (HBT) technologies based on GaAs and InP materials. This paper summarizes the development status of our MMIC-based MMW sources. In particular, low phase noise MMW sources have been demonstrated with HBT device technology.