A model for impulsive EMI effects caused by low voltage ESD

机译：低压ESD引起的脉冲EMI效应的模型

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A model for impulsive electromagnetic interference (EMI) effects caused by relatively low-voltage electrostatic discharge (ESD) on digital electronic systems is proposed. The power of impulsive EMI is governed by the product of the following three parameters: charged voltage, rise time of the discharge current, and susceptibility of the system.

机译：提出了一种由数字电子系统上相对较低的静电放电（ESD）引起的脉冲电磁干扰（EMI）效应的模型。脉冲EMI的功率取决于以下三个参数的乘积：充电电压，放电电流的上升时间和系统的磁化率。

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《Industry Applications Society Annual Meeting, 1993., Conference Record of the 1993 IEEE》|1993年|P.1839-1842|共4页
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Honda M.;
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中图分类无线电电子学、电信技术;
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A model for impulsive EMI effects caused by low voltage ESD

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