An energy-balance model for non-isothermal device simulation

摘要

In this paper a new model, aimed at modeling heat transport in silicon devices, is presented. It relies on three energy-balance equations, derived for electrons, holes and the lattice. By means of proper assumptions, a single equation is worked out, which supplements the "standard" semiconductor equations and provides an accurate, yet simple, model, suitable for numerical simulation of non-isothermal regimes. Full 3D implementation of such a model has been carried out, and some results of electrothermal simulation are discussed.