Growth of ternary III-V-compound semiconductors by MOVPE using novel liquid metalorganic In precursors

摘要

Dimethylaminopropyl-dimethyl-indium (DADI) was used to grow GaInAs and GaInP in combination with two Ga precursors: dimethylaminopropyl-diethyl-gallium (DADEG) and the adduct TMGa-NH/sup i/Pr2. No side reactions with the hydrides could be detected. It is shown that the quality of the layers suffered from the instability of the evaporation rate of DADEG and from some gas-phase reactions between DADI and the Ga-adduct at atmospheric pressure near the substrate surface, although the evaporation rate of DADI is stable over time, as monitored by the composition reproducibility of ternary layers. Due to its lower chemical reactivity DADI can be easily synthesized in high purity, as demonstrated by Hall and photoluminescence (PL) experiments on the layers grown with DADI batches not specially purified.