Thermal annealing of GaAs concentrator solar cells

摘要

The thermal annealing of GaAs concentrator cells for space power after electron irradiation is reported. Results are given for cells annealed at 150 degrees C, 200 degrees C, and 250 degrees C. Isochronal annealing was done for 20 min intervals up to 350 degrees C. For cells irradiated with electrons of energies between 0.7 and 2.3 MeV, the recovery decreases with increasing electron energy. Isothermal and isochronal annealing produce the same recovery. Cells irradiated to 3*10/sup 15/ or 1*10/sup 16/ e/cm/sup 2/ recover to similar unannealed fractions. Significant annealing is seen starting at 150 degrees C, although very long times are required.