Morphology of Nanowire Arrays Produced by Metal-Assisted Chemical Etching on Si Wafers of Different Types: Comparative Analysis

摘要

The results of studies on fabrication of silicon nanowires on the surface of silicon wafers of different types using the metal-assisted chemical etching method are presented. The influence of the deposition time of Ag particles on their morphology and filling density on the surface of silicon wafers has been analyzed. At different etching time of wafer samples of n-type in a HF-H2O2 based etching solution, vertically aligned arrays of solid nanowires are obtained. It is shown that changing the duration of Ag nanoparticles deposition at the same etching time, it is possible to change the distance between the nanowire stacks. It was established that under identical technological conditions the nanowires were not formed on a p-Si wafer. The results are discussed from the point of view of the specific etching mechanism of Si wafers with different type of conductivity and crystallographic orientation.