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Enhanced thermoelectric properties of 2D W_xMo_(1-x)S_2 alloys based vertical heterostructures for energy storage applications

机译:基于型垂直异质结构的2D W_XMO_(1-X)S_2合金的增强的热电性能,用于储能应用

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Individual 2-dimensional materials exhibit remarkable properties, but neither of them can show all the required attributes. Stacking different 2-dimensional materials in hetero-layered architecture unlock the combined advantages of the individual building blocks. In recent experiments 2-dimensional vertical heterostructures of graphene/hBN/W_xMo_(1-x)S_2 have been successfully grown. Herein, using the first-principles method, we have analyzed the stability, electronic band structures, and electronic transport coefficients of such vertical heterostruc-ture at 300 K. The calculated bandgap of the pristine monolayer of graphene, hBN, MoS_2, and WS_2 is 0 eV, 3.1 eV, 1.6 eV, and 1.8 eV, respectively. Furthermore, we have observed the atomic level phenomena of bandgap opening in graphene upon changing the interlayer distance. Electrical conductivity (σ/τ) and thermoelectric power factor (PF/τ) are calculated as a function of Fermi energy (E_F). At the studied E_F range, for the graphene/hBN/W_xMo_(1-x)S_2 2D vertical heterostructure, the achieved electrical conductivity and thermoelectric power factor are 0.7×10~(20)Ω~(-1)m~(-1)s~(-1) and 0.75×10~(11) Wm~(-1)K~(-2)s~(-1), respectively. Our findings provide solid outlines for TMDs alloyed based thin-layer 2D heterostructures that could play a crucial role in revolutionizing energy storage devices and expanding all limits of current technologies in super-capacitors and next-generation reliable batteries due to its slit-shaped diffusion channel and high surface to mass ratio, which could enable the fast movements of ions approaching the excellent electrochemical properties.
机译:单个二维材料表现出显着的属性,但它们都没有显示所有必需的属性。堆叠不同的二维材料在异层体系结构中解锁了各个构件块的组合优势。在最近的实验中,石墨烯/ HBN / W_XMO_(1-X)S_2的二维垂直异质结构已成功生长。这里,使用第一原理方法,我们已经分析了如图300K的这种垂直异性转向法的稳定性,电子带结构和电子传输系数。石墨烯,HBN,MOS_2和WS_2的原始单层的计算的带隙是0 EV,3.1eV,1.6eV和1.8 eV分别。此外,在改变层间距离时,我们观察到在石墨烯中的带隙开口的原子水平现象。作为费米能量(E_F)的函数计算导电性(Σ/τ)和热电功率因数(PF /τ)。在研究的E_F范围内,对于石墨烯/ HBN / W_XMO_(1-X)S_2 2D垂直异质结构,实现的电导率和热电功率因数为0.7×10〜(20)Ω〜(-1)m〜(-1 )S〜(-1)和0.75×10〜(11)Wm〜(-1)k〜(-2)s〜(-1)。我们的发现提供了TMDS合金的薄层2D异质结构的实体轮廓,其在旋转能量存储装置方面可以发挥至关重要的作用,并且由于其狭缝形扩散通道而扩大超级电容器和下一代可靠电池中的当前技术的所有限制和质量比的高表面,这可以使离子的快速运动接近优异的电化学性质。

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