A Novel Bi-functional Memory-PUF Module Utilizing Adjustable Switching Window of RRAM

摘要

A novel bi-functional memory-PUF module is proposed and experimental demonstrated using RRAM for the first time. The PUF mapping is generated utilizing the resistance distribution after successful forming. As different forming conditions have significant effect on the memory window of RRAM, a two-phase forming process is designed to generate and store the PUF information. Each RRAM can still be utilized as memory with program-verify technique, and PUF information can be read out directly by distinguishing resistance levels. The majority voting technique is applied to enhance the reliability. Less than 2% bit-error-rate is achieved across a wide temperature range from -40 to 125 °C by using 7 RRAM cells to represent one PUF bit. The 4 resistance levels remain distinguishable after 100-second baking at 125 °C, indicating excellent retention.