Enhanced numerical design of HgCdTe MWIR HOT P⁺νN⁺ photodiodes

摘要

Various configurations of Hg1-xCdxTe heterostructures were investigated to find the best solution for MWIR non-equilibrium photodiodes. A promising solution is the use of a complementary barrier infrared detector [1] in which we can limit the impact of generation on contact areas and significantly reduce surface leakage currents. We have choose for simulation P⁺νN⁺ photodiodes structure working at 230K.