Eigen-State Energies in Asymmetric double Quantum Wells Lattice-Matched to InP

机译：匹配InP的非对称双量子阱的本征态能量

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Asymmetric In0.53Ga0.47As/In0.52Al0.48As multi-quantum wells (MQWs) were studied theoretically and experimentally. Eigen-energies of eigen-states and wave functions confined in the asymmetric MQWs were deduced from by calculation based on the transfer matrix method and optical interband transitions were obtained by photocurrent spectroscopy. Results of the calculation agree well with experimental data.

机译：不对称输入 0.53 嘎 0.47 作为/输入 0.52 铝 0.48 作为多量子阱（MQW）的理论和实验研究。通过传递矩阵法的计算，推导了非对称MQWs所固有的本征态能量和波函数，并通过光电流能谱获得了带间跃迁。计算结果与实验数据吻合良好。

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《International Conference on Numerical Simulation of Optoelectronic Devices》|2019年|35-36|共2页
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K. Tanaka; M. Fujiwara; N. happo; S. Takahashi;
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Quantum well devices; Wave functions; Indium phosphide; III-V semiconductor materials; Photoconductivity; Effective mass; Temperature measurement;

机译：量子阱器件;波函数;磷化铟; III-V族半导体材料;光电导性;有效质量;温度测量;

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1. Minibands of eigen-state energies of ln_(0.53)Ga_(0.47)As multi-quantum wells lattice-matched to InP [J] . Koichi Tanaka, M. Fujiwara, N. Happo, Optical and quantum electronics . 2018,第8期

机译：ln_（0.53）Ga_（0.47）As本征态能量的微带与InP晶格匹配
2. Application of band theory to experimental eigen-state energies of In_0.53Ga_0.47As quantum wells lattice-matched to InP [J] . K. Tanaka, K. Fujikawa, M. Fujiwara, Optical and Quantum Electronics . 2009,第11a13期

机译：能带理论在In _{0.53 Ga _{0.47 As量子阱与InP晶格匹配的实验本征态能量中的应用}}
3. Application of band theory to experimental eigen-state energies of In_(0.53)Ga_(0.47)As quantum wells lattice-matched to InP [J] . K. Tanaka, K. Fujikawa, M. Fujiwara, Optical and quantum electronics . 2009,第11a13期

机译：能带理论在In_（0.53）Ga_（0.47）As量子阱与InP晶格匹配的实验本征态能量中的应用
4. Eigen-State Energies in Asymmetric double Quantum Wells Lattice-Matched to InP [C] . K. Tanaka, M. Fujiwara, N. happo, International Conference on Numerical Simulation of Optoelectronic Devices . 2019

机译：非对称双量子井的特征状态能量晶格与INP相匹配
5. Optical properties of asymmetric double quantum wells and optimization for optical modulators. [D] . Kim, Dong Kwon. 2008

机译：非对称双量子阱的光学性质和光学调制器的优化。
6. Excitonic Energy Transfer within InP/ZnS Quantum DotLangmuir–Blodgett Assemblies [O] . Houman Bahmani Jalali, Rustamzhon Melikov, Sadra Sadeghi, -1

机译：InP / ZnS量子点内的激子能量转移朗缪尔-布洛杰特议会
7. Ga0.47In0.53As multiquantum well heterostructures, confined by pseudoquaternary (InP)n/(Ga0.47In 0.53As)m short period superlattices lattice-matched to InP [O] . Dotor María Luisa, Huertas P., Golmayo Dolores, 2012

机译：Ga0.47In0.53As多量子阱异质结构，由与InP晶格匹配的伪四元（InP）n /（Ga0.47In 0.53As）m短周期超晶格限制
8. Theoretical Study of Phase-Shifted Quantum Beats in Time-Resolved LuminescenceSpectra from a Biased Asymmetric Double Quantum Well [R] . Ohtsuki, Y., Pandey, L. N., George, T. F. 1992

机译：偏置非对称双量子阱时间分辨发光光谱中相移量子阱的理论研究

Eigen-State Energies in Asymmetric double Quantum Wells Lattice-Matched to InP

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