首页> 外文会议>Iranian Conference on Electrical Engineering >Low Power, and Highly Reliable Single Event Upset Immune Latch for Nanoscale CMOS Technologies
【24h】

Low Power, and Highly Reliable Single Event Upset Immune Latch for Nanoscale CMOS Technologies

机译:适用于纳米级CMOS技术的低功耗,高可靠性单事件翻转免疫锁存器

获取原文

摘要

The susceptibility of sequential logic circuits to radiation induced soft errors is increasing as CMOS transistors are scaling down and the supply voltage is decreasing. Latch circuits are one of the main parts of sequential logic and can be affected by radiation. This paper proposes and evaluates a new highly reliable and low cost latch circuit capable of tolerating energetic particles. Employing a 45nm CMOS model, SPICE simulations reveal that the proposed latch can fully tolerate the radiation induced single event upsets (SEU) caused by high energetic particles. Moreover, the proposed SEU immune latch circuit has the lowest power consumption with respect to other recently proposed SEU tolerant latches. It is shown that up to 80% power saving is obtainable. Furthermore, the proposed circuit offers a lower delay and also a lower power delay product (PDP).
机译:随着CMOS晶体管的缩小和电源电压的降低,顺序逻辑电路对辐射引起的软错误的敏感性在增加。锁存电路是时序逻辑的主要部分之一,可能会受到辐射的影响。本文提出并评估了一种能够耐受高能粒子的新型高度可靠,低成本的锁存电路。 SPICE仿真采用45nm CMOS模型,揭示了所提出的锁存器可以完全容忍由高能粒子引起的辐射诱发的单事件不安定(SEU)。而且,相对于其他最近提出的SEU容忍锁存器,提出的SEU免疫锁存器电路具有最低的功耗。结果表明,可以节省多达80%的功率。此外,所提出的电路提供了较低的延迟以及较低的功率延迟乘积(PDP)。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号