Design and Fabrication of Micro-Hall-Effect Sensors

摘要

The objective of this study was to design and fabricate Hall-effect sensors utilizing microelectromechanical system technology. The proposed sensor structure comprises a P-type silicon substrate, a SiO₂ isolation layer, a phosphorus ion implanted layer, and gold wires. Three types of Hall-effect sensors were designed and fabricated: square, cross, and square-cross-end types. During the fabrication of the Hall-effect sensors, an ion implanter was first utilized to implant phosphorus ions in the silicon substrate. Subsequently, the defected atoms were restored by annealing. Finally, gold wires were deposited as electrical leads through electron beam evaporation. When the fabricated sensor was brought into the vicinity of a magnet, its magnetic field changed due to the Hall effect caused by moving carriers. A Hall voltage could thus be measured. As the magnetic field increased, the Hall voltage increased. The cross-type Hall-effect sensor outperformed the other types.