Study of Anomalous Hot-Carrier Degradation of NMOS Transistor with 3D-NAND Hydrogen-Rich Process

摘要

Hot Carrier Injection (HCI) behavior of 3.3V NMOS with 3D-NAND hydrogen-rich process has been studied, and an anomalous HCI degradation is observed. To explain this anomalous degradation, the interface trap evaluation has been studied by TCAD and a novel model for current (IDS and IDL) degradation is proposed for the first time.