Self-Reactive Etching of β-Ga2O3for Fabricating Trench Schottky Barrier Diodes

摘要

A novel etching technique with negligible etching damage for $eta-ext{Ga}_{2}mathrm{O}_{3}$ has been proposed in this paper. With employment of this process called self-reactive etching (SRE), the fabricated $eta-ext{Ga}_{2}mathrm{O}_{3}$ trench Schottky barrier diodes (SBDs) possess a high-quality surface and show excellent electric characteristics. Attributing to the low negative interface charges at the sidewall depletion of the $eta-$ Ga2O3 fin-channels, an ideality factor of 1.41 and a low interface states density of 2.9x10^{11 cm−2 eV−1 were realized.}