Simulation of J0 imaging techniques with PVMOS

摘要

A detailed understanding of the behavior of multi-crystalline silicon solar cells needs to consider the impact of inhomogeneities, and therefore requires means for characterizing as well as modeling inhomogeneities. In this work the capabilities of the modeling tool Photo-Voltaic Module Simulator (PVMOS) to model inhomogeneous devices are demonstrated. To this end photo-luminescence (PL) based saturation current density (J0) imaging techniques are investigated. A realistic spatial J0 distribution is modeled by importing an experimental J0-image of a 15.6×15.6cm2 solar cell in our simulator. Subsequently, we use PVMOS to simulate two J0 imaging techniques. This allows for an estimation of the accuracy of the J0 imaging methods as we can directly compare the J0 input data with the reconstructed J0 image.