Cu2O photovoltaic devices incorporating Zn(O, S) buffer layers

摘要

Cu2O is a semiconductor composed of earth - abundant and non-toxic elements that is as a promising photovoltaic material. One of the main issues limiting the efficiency of Cu2O solar cells is the availability of n-type window layers with an appropriate band offset and low interfacial reactivity. In this work, we show the effect of controlling the interface composition on the device properties of a Cu2O solar cell incorporating a Zn(O, S) window layer. We demonstrate that deposition of Zn(O, S) at elevated temperature limits formation of ZnSO4 and increases the current that can be collected from the cell by 54%.