The influence of minority carrier lifetime on characteristics of heterojunction back contact silicon solar cell

摘要

The influence of minority carrier lifetime on heterojunction back contact (HBC) silicon solar cell is studied. The cell was fabricated with different width ratios of P-electrode to N-electrode (P/N ratio). It is found that the optimized efficiency was obtained at a P/N ratio of 1. The thickness of passivation layer was investigated to achieve an efficiency of 18.4% which is the trade-off between open circuit voltage and fill factor.